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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3743 DESCRIPTION *Collector-Emiiter Breakdown Voltage: V(BR)CEO= 800V(Min.) *Wide Area of Safe Operation *High Speed Switching * APPLICATIONS *Designed for high speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE 900 V 800 V 7 V 2 A 4 A 1 A 2 W UNIT .cn mi e Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @Ta=25 PC Collector Power Dissipation @TC=25 Tj Junction Temperature 40 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3743 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) ICBO IEBO Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V A A Collector Cutoff Current VCB= 900V; IE= 0 VEB= 7V; IC= 0 50 Emitter Cutoff Current 50 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain Switching Times ton ts tf Turn-on Time Storage Time Fall Time w w scs .i w IC= 0.8A; VCE= 5V .cn mi e 6 6 1.0 s s s IC= 0.8A; IB1= 0.16A;IB2= -0.32A; VCC= 250V 4.0 1.0 isc Websitewww.iscsemi.cn |
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